Uncertainty in the Temperature of Silicon Wafers Measured by Radiation Thermometry Based upon a Polarization Technique

− The emissivity behaviour of a silicon wafer under various conditions was theoretically and experimentally investigated. As a result, the quantitative relationship between the ratio of p-polarized radiance to spolarized one, and polarized emissivities was obtained irrespective of the emissivity change of wafers due to the oxide film thickness under the wide variations of resistivity. Based on the result, we propose a new radiation thermometry method that can measure both the temperature and the spectral polarized emissivity of the silicon wafer, and estimate the uncertainty of the measurements. Currently, the uncertainty of the temperature measurement is estimated to be 3.52 K (2 k) and 3.80 (2 k) for p-polarization and spolarization, respectively, in the temperature range over 900 K